Working of Transistors

Neso Academy
2 Jun 201612:04

Summary

TLDRThis lecture delves into the functioning of bipolar junction transistors (BJTs), highlighting their three-terminal nature and the significance of both electrons and holes in their operation. The video explains the active mode of BJTs, detailing how forward and reverse biases affect the resistance and current flow. It emphasizes the transistor's amplification capability, demonstrating how a weak input signal can be transformed into a stronger output. The script also discusses the movement of charge carriers, the role of barrier potential, and introduces the concept of reverse saturation current. The lecture concludes with a foundational understanding of the relationships between emitter, base, and collector currents in an NPN transistor.

Takeaways

  • πŸ˜€ The lecture discusses the functioning of a Bipolar Junction Transistor (BJT), emphasizing its role in electronics.
  • πŸ”¬ The term 'BJT' stands for Bipolar Junction Transistor, highlighting the involvement of both electrons and holes as charge carriers.
  • πŸ”‹ The 'transistor' name is derived from 'transferred resistor,' referring to its ability to transfer a low resistance to a high resistance.
  • πŸ“‘ In active mode, a BJT operates with one junction (J1) forward-biased and the other (J2) reverse-biased, affecting resistance levels.
  • πŸ”Œ The input voltage (VI) is measured across the low resistance, while the output voltage (VO) is across the high resistance, facilitating signal amplification.
  • 🌐 The NPN transistor consists of an n-type emitter, a p-type base, and an n-type collector, with specific terminals for each.
  • πŸ”„ To operate in active mode, the emitter-base junction (J1) must be forward-biased, and the base-collector junction (J2) must be reverse-biased.
  • ⚑ The barrier potential at J1 decreases with forward bias, allowing electrons to cross from emitter to base and then to the collector.
  • πŸ” Most electrons from the emitter bypass the base due to its thin and lightly doped nature, leading to a significant electron flow to the collector.
  • πŸ”— The collector current (IC) is primarily determined by the emitter current (IE) and a small reverse saturation current (Ico), with a relationship defined by the transistor's alpha (Ξ±).

Q & A

  • What does BJT stand for?

    -BJT stands for Bipolar Junction Transistor. It is called bipolar because it involves both types of charge carriers: electrons and holes.

  • What is the significance of the term 'transistor'?

    -The term 'transistor' is derived from 'transferred resistor'. It refers to the ability of the device to transfer a low resistance to a high resistance, which is key to its amplifying function.

  • How does the transistor achieve amplification?

    -Amplification is achieved by having a weak input signal across a low resistance and an amplified output signal across a higher resistance, with the same current flowing through both.

  • What is the composition of an NPN transistor?

    -An NPN transistor consists of an 'n' emitter region, a 'p' base region, and an 'n' collector region, with corresponding terminals for each.

  • What is the condition for operating an NPN transistor in active mode?

    -For an NPN transistor to operate in active mode, the Junction J1 must be forward biased, and Junction J2 must be reverse biased.

  • What happens to the barrier potential when a transistor is forward biased?

    -When a transistor is forward biased, the barrier potential at Junction J1 is reduced, allowing electrons to cross over from the emitter to the base.

  • Why does most of the electron flow go to the collector instead of recombining in the base?

    -Most of the electrons go to the collector because the base is very thin, lightly doped, and small, which results in minimal recombination of electrons with holes in the base.

  • What is the significance of alpha (Ξ±) in the context of a transistor?

    -Alpha (Ξ±) represents the ratio of electrons that are collected by the collector to the number of electrons that enter the base. It is a key parameter in determining the transistor's amplification capability.

  • What is the reverse saturation current and why is it important?

    -The reverse saturation current is the current that flows through Junction J2 when it is reverse biased. It is important because it represents the leakage current and is associated with the collector, denoted as IC_o.

  • How is the collector current (IC) related to the emitter current (IE) and the base current (IB)?

    -According to Kirchhoff's current law, the emitter current (IE) is equal to the sum of the base current (IB) and the collector current (IC), expressed as IE = IB + IC.

  • How does the direction of current relate to the movement of electrons in a transistor?

    -The direction of current is opposite to the movement of electrons. For example, in an NPN transistor, emitter current flows from right to left, while electrons move from left to right.

Outlines

00:00

πŸ”¬ Introduction to Transistors and BJT

This paragraph introduces the concept of transistors, specifically Bipolar Junction Transistors (BJT). It explains the significance of the term 'bipolar' due to the involvement of both electrons and holes as charge carriers. The paragraph also details the meaning behind 'transistor', derived from 'transferred resistor', highlighting the transistor's ability to transfer a signal from a low to a high resistance, thus amplifying the signal. The explanation includes the active mode of operation where one junction is forward-biased and the other is reverse-biased, leading to the amplification of the input signal at the output. The paragraph concludes with an introduction to the NPN transistor, describing its structure and the need to bias it correctly for operation.

05:03

πŸ” Detailed Analysis of Transistor Biasing

The second paragraph delves deeper into the biasing of transistors, particularly focusing on the barrier potentials at Junction J1 and Junction J2. It discusses how forward biasing reduces the barrier potential at J1, allowing electrons to move from the emitter to the base and then to the collector. The paragraph emphasizes the thin and lightly doped nature of the base, which results in minimal recombination of electrons and holes, leading to a high electron transfer to the collector. It also introduces the concept of reverse saturation current or leakage current, which occurs when Junction J2 is reverse-biased. The paragraph concludes with a discussion of the movement of electrons and the resulting current flow, setting the stage for understanding the transistor's behavior in an electrical circuit.

10:05

πŸ”— Understanding Current Relations in a Transistor

The final paragraph focuses on the relationships between the emitter current (Ie), base current (Ib), and collector current (Ic) in an NPN transistor. It begins by establishing the direction of these currents based on the movement of electrons. The paragraph then uses Kirchhoff's Current Law (KCL) to establish the relationship Ie = Ib + Ic, which is crucial for understanding how current flows within the transistor. The discussion concludes with the formula for the collector current, Ic = Ξ± * Ie + Ico, where Ξ± represents the efficiency of electron transfer from the emitter to the collector, and Ico is the reverse saturation current. This paragraph provides a foundation for further exploration of transistor behavior and its applications in amplification and other electronic functions.

Mindmap

Keywords

πŸ’‘Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is a key component in modern electronic devices. In the script, the transistor is central to the discussion as the lecturer explains its function and operation.

πŸ’‘BJT

BJT stands for Bipolar Junction Transistor, a type of transistor that involves both electrons and holes as charge carriers. The script explains that 'B' stands for bipolar because both types of charge carriers are involved in its operation, and 'JT' stands for Junction Transistor, indicating the presence of two junctions.

πŸ’‘Active Mode

Active mode refers to the operating condition of a transistor where it amplifies signals. In the script, the lecturer describes how a transistor operates in the active mode with one junction (J1) forward-biased and the other (J2) reverse-biased, which is essential for signal amplification.

πŸ’‘Forward Bias

Forward biasing is the process of applying a voltage to a semiconductor junction in a direction that favors the flow of current. The script mentions that to operate a transistor in active mode, Junction J1 needs to be forward-biased to allow current flow.

πŸ’‘Reverse Bias

Reverse biasing is the application of a voltage to a semiconductor junction that opposes the flow of current. In the context of the script, Junction J2 is reverse-biased to create a high-resistance path, which is necessary for the transistor's amplifying action.

πŸ’‘Emitter

The emitter in a transistor is the region that emits charge carriers, typically electrons, into the base. The script explains that in an NPN transistor, the emitter is doped n-type and is connected to the negative terminal to forward-bias the transistor.

πŸ’‘Base

The base is a thin layer in a transistor that separates the emitter and collector. It is lightly doped and plays a crucial role in controlling the current flow. The script emphasizes that due to its thinness, most electrons pass through to the collector rather than recombining in the base.

πŸ’‘Collector

The collector is the region in a transistor where the majority of charge carriers are collected. The script describes that in an NPN transistor, the collector is n-type and is connected to the positive terminal to reverse-bias the transistor.

πŸ’‘Alpha (Ξ±)

Alpha (Ξ±) is the common-base current gain in a transistor, representing the ratio of the collector current to the base current. The script uses alpha to explain how the current flowing into the emitter is related to the current flowing out of the collector.

πŸ’‘Kirchhoff's Current Law (KCL)

KCL is a basic principle in circuit analysis stating that the sum of currents entering a junction is equal to the sum of currents leaving it. The script uses KCL to derive the relationship between emitter current (Ie), base current (Ib), and collector current (Ic) in a transistor.

πŸ’‘Amplification

Amplification is the process of increasing the strength of a signal. The script explains how a transistor can amplify a weak input signal (Vi) to a stronger output signal (Vo) by utilizing the difference in resistance between the forward-biased and reverse-biased junctions.

Highlights

Explanation of how a transistor works, focusing on its bipolar nature involving both electrons and holes.

Definition of BJT, where B stands for bipolar and J for Junction, indicating two junctions in a transistor.

Origin of the term 'transistor' from 'transferred resistor', highlighting its function in resistance transfer.

Description of active mode operation where one junction is forward biased and the other is reverse biased.

Amplification process using a transistor by comparing input and output voltages across different resistances.

Introduction to the NPN transistor, detailing the roles of the emitter, base, and collector regions.

Procedure to bias the transistor in active mode with forward and reverse bias potentials.

Analysis of electron and hole movement within the transistor due to barrier potential changes.

Importance of the base's thinness and light doping in a transistor, affecting electron recombination.

Explanation of how most electrons from the emitter move to the collector due to high kinetic energy.

Concept of reverse saturation current or leakage current in a reverse-biased junction.

Calculation of collector current as the sum of electrons moving to the collector and the reverse saturation current.

Direction of emitter, base, and collector currents in an NPN transistor, explained with electron movement.

Kirchhoff's current law (KCL) application to determine the relationship between emitter, base, and collector currents.

Emphasis on the significance of alpha in the transistor's operation and its impact on current relationships.

Anticipation of further discussion on alpha in upcoming presentations to deepen understanding of transistor operation.

Transcripts

play00:04

in the last lecture I introduced

play00:07

transistors in this lecture I will

play00:09

explain how transistor works I also

play00:11

explained the meaning of named BJT BJT B

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stands for bipolar B stands for bipolar

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we have bipolar in the name because

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there is involvement of both type of

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charge carriers there is involvement of

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electrons as well as holes in transistor

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that's why we have bipolar in the name G

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stands for Junction J stands for

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Junction two junctions are formed in

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transistor Junction j1 and Junction j2

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two junctions are formed in transistors

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so we have Junction in the name now the

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most important thing is the meaning of

play00:50

transistor why we call this three

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terminal device transistor the name

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transistor is coined from word

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transferred resistor transistor is

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coined from transferred resistor in

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which we have trans

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and store I sto R and this two makes the

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word transistor now what is the meaning

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of transferred resistor if we talk about

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active mode if we talk about active mode

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of operation then we already know

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Junction j1 is forward biased and

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Junction j2 is reverse biased when

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Junction j1 is forward biased it will

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offer a very low resistance or ideally

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resistance should be zero when Junction

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j2 is reverse biased it will offer a

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very high resistance or ideally the

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resistance must be infinity so this is

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what we have in active mode and if we

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have same current same current flowing

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then initially it will flow through a

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low resistance let's say the current is

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I and after this at output it will flow

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through high resistance let's say it is

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capital R and the same current is

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flowing through both these resistances

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so somehow we have transferred the low

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resistance to the high resistance that's

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why we have the name transferred

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resistor and from this we got transistor

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there is very significant use of this

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thing for example let's say VI is the

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input voltage and V o is the output

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voltage we are measuring VI across this

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small resistance and we are measuring vo

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across this large resistance so V I is

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equal to I multiplied by r and vo is

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equal to I multiplied by capital R the

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current is same and the input resistance

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is smaller than the output resistance so

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we can say that VI is smaller than we

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owe so we had a weak signal at the input

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but we have an amplified signal at the

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output so there is amplification

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amplification by using the three

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terminal device all these things will be

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clear when I explain the working of NPN

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transistor in active mode this is the

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NPN transistor so the emitter region is

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n the base region is P and the collector

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region is n this is NPN transistor this

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terminal is emitter terminal this

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terminal is base terminal and this

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terminal here is collector terminal and

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we want to operate this transistor in

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active mode we want to have proper eight

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this transistor in active mode and we

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already know in active mode Junction j1

play03:58

is forward bias so two forward bias

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Junction j1 we need to we need to apply

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a forward bias potential and is

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connected to the negative terminal and P

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is connected to the positive terminal so

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emitter is connected to the negative

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terminal and base is connected to the

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positive terminal let's say this forward

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biasing potential is V EB

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and we have to reverse bias Junction j2

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so n is connected to the positive

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terminal and P is connected to the

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negative terminal collector is connected

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to the positive terminal base is

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connected to the negative terminal and

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let's say this reverse biasing potential

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is we see B now we have Junction j1

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forward biased and Junction j2 reverse

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bias now we will analyze the movement of

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electrons and holes in this three

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terminal device and let's say let's say

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VB is the barrier potential for Junction

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j1 in Junction j2 when the transistor

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terminals are open circuited there is no

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biasing potential in the transistor so

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VB is the barrier potential for Junction

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j1 and Junction j2 when there is no

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biasing potential and we have to analyze

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what will happen to the barrier

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potential once we apply the biasing

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potentials in the transistor this is

play05:25

barrier potential of Junction j2 and it

play05:28

is equal to VB this is barrier potential

play05:31

of Junction j1 and it is also equal to

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VB now Junction j1 is forward biased

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after the application of V EB and the

play05:40

barrier potential will now reduce and

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let's say the new barrier potential is

play05:45

this the new barrier potential the new

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barrier potential is equal to VB VB

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minus V EB forward biasing potential on

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the other hand Junction j2 is reverse

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biased so barrier potential will

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increase and the new barrier potential

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the new barrier potential is equal to VB

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VB plus VC B plus we see be the reverse

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biasing potential now we can easily

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analyze the movement of electrons and

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holes because we have idea about the

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barrier potentials because of the

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reduced barrier potential at Junction j1

play06:29

the electrons on the N side that is the

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emitter will cross the junction and move

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to the base and recombine with the holes

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in the base there is one very important

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thing

play06:40

that you always have to keep in your

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mind base in case of transistor is very

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small it's very small and it is also

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lightly lightly domed and because of

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this because base is thin and it is

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lightly doped there is very small

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recombination of electrons from the

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emitter and most of the electrons from

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the emitter pass over to the collector I

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will repeat this point again barrier

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potential at Junction j1 is reduced so

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electrons from emitter will cross over

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the junction and very small amount of

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electrons from the emitter will

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recombine in the base because base is

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very small very thin and it is lightly

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doped so most of the electrons will

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cross the junction j2 because they have

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high velocity and this implies they have

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high kinetic energy so most of the

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electrons emitted by the emitter will

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find themselves in the collector a very

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few electrons very few electrons will

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recombine with the holes and this means

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electrons will move to VEB the positive

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terminal of the forward biasing

play08:00

potential let's say n number of

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electrons enter the base and number of

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electrons enter the base out of which

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one minus alpha n out of which one minus

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alpha n electrons combined with the

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holes in the base and alpha n alpha and

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electrons move to the collector this is

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what is happening in the transistor only

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2 to 5% 2 to 5% electrons are combined

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in the base and 95 to 98% electrons are

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collected in the collector therefore

play08:41

most of the electrons emitted by the

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emitter moved to the collector so this

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is what will happen when you forward

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bias the junction j1 and junction j2 in

play08:50

bipolar Junction transistor there is one

play08:53

more thing

play08:54

that we must not forget and it is the

play08:56

reverse saturation current Junction j2

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is reverse biased so there must be

play09:00

reverse saturation current through

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Junction j2 we have minority charge

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carriers on n side and we have minority

play09:07

charge carriers on P side on n side

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minority charge carrier is hole on P

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side minority charge carrier is electron

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so this hole will move like this and

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this electron will move like this so

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there there is current called as a

play09:24

reverse saturation current or leakage

play09:27

current when the junction j2 is reverse

play09:29

biased I am calling the reverse

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saturation current reverse saturation

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current or leakage current or leakage

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current IC o---- because this current is

play09:43

associated with the collector so there

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is subscript C this o stands for open

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circuit we measure this current when

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emitter terminal when ammeter terminal

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is open circuited so this is why I am

play09:57

calling this current IC o---- and if I

play10:00

if I want to find out the collector

play10:05

current IC then it is equal to alpha I

play10:10

alpha times the emitter current because

play10:13

n is the number of electrons entering

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the base and alpha n is the number of

play10:18

electrons moving to the collector so

play10:20

current will be alpha times ie plus IC

play10:24

o---- so this is the value of collector

play10:29

current the next thing is to find out

play10:32

relation between the emitter current

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base current and collector current for

play10:36

this purpose first we have to find out

play10:38

direction of the three currents you can

play10:41

see electron is moving from left to

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right so direction of current is like

play10:47

this from right to left

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this is i.e the emitter current when

play10:53

electrons from emitter recombine with

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the holes the direction of current will

play10:58

be like this and the current is IB

play11:01

because electron will move in this

play11:04

direction to the positive terminal of

play11:06

the battery so current will

play11:07

flow in opposite direction and to find

play11:10

out collector current we again have to

play11:12

focus on the movement of electrons

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electrons are moving from base to

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collector like this in this fashion so

play11:19

current will be like this from right to

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left and to find out relation between ie

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IB and IC we have to use Kirchhoff's

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current law KCl and from KCl we know sum

play11:35

of currents entering is equal to the sum

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of currents leaving ie is leaving I II

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is leaving IB and IC are entering so ie

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is equal to IB plus IC this is what we

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have in the NPN transistor in active

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mode these two relations are very

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important and we will talk more about

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alpha in the coming presentations this

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is all for this lecture see you in the

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next one

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