Samsung Semiconductor Explains Photo Lithography and EUV in 5 Minutes

Summary

This video explores the advancements and benefits of Extreme Ultraviolet (EUV) lithography in semiconductor manufacturing. It covers the principles of photolithography, its challenges, and how EUV technology, with its shorter wavelength, addresses limitations such as diffraction and interference. Unlike traditional methods, EUV reduces the need for multiple patterning, cutting down on process steps, time, and costs while improving yield. By utilizing mirrors and operating in a vacuum, EUV enhances efficiency for 7nm and below process nodes. The video highlights Samsung Foundry's ongoing efforts to further optimize EUV for semiconductor production.

Takeaways

• 😀 Photolithography uses light and lenses to create small, complex patterns in semiconductor manufacturing.
• 😀 Masks are created with patterns at a larger scale, and lenses refract light to create smaller, accurate patterns.
• 😀 Photoresist (PR) changes structure when exposed to light, and different PR types (positive and negative) are used for pattern creation.
• 😀 Multiple patterning technology (MPT) uses multiple masks and steps to overcome light interference and create clear patterns.
• 😀 Optical proximity correction (OPC) adjusts mask patterns to compensate for distortion during the photo and etching steps.
• 😀 As pattern dimensions shrink, MPT and OPC are insufficient, leading to the need for shorter wavelength light like extreme ultraviolet (EUV).
• 😀 EUV uses a 13.5 nm wavelength and is essential for 7 nm and below semiconductor process nodes.
• 😀 EUV light is generated from plasma created by CO2 laser interaction and is then focused using mirrors in a vacuum to minimize absorption.
• 😀 Unlike traditional masks that transmit or block light, EUV masks reflect or absorb light, which enables finer patterning.
• 😀 EUV reduces costs by replacing or reducing the use of multiple masks, cutting down on process steps and processing time, leading to improved yields and fewer defects.

Q & A

What is photolithography, and how is it similar to a camera?

Photolithography is a process used in semiconductor manufacturing to create complex patterns on a small area by shining light through a mask. Similar to a camera, it uses light and lenses to capture and print an object.

What challenges does photolithography face, and how are they addressed?

One challenge in photolithography is the distortion caused by diffraction and interference as light passes through a mask. To overcome this, multiple patterning technology (MPT) and optical proximity correction (OPC) are used to minimize distortion and ensure accurate patterning.

What is multiple patterning technology (MPT), and how does it improve photolithography?

MPT is a method that uses multiple masks and process steps to create a single pattern. By using two masks, the light interference and distortion are avoided, allowing for more accurate and clean patterns.

How does optical proximity correction (OPC) address issues in photolithography?

OPC compensates for errors in pattern dimensions that may occur due to the properties of light. It adjusts the mask patterns to ensure that the final etching on the wafer closely matches the intended design.

Why is the wavelength of light important in photolithography, and how does shorter wavelength help?

Shorter wavelengths reduce the diffraction and spread of light, enabling the creation of finer patterns. Using a thinner brush analogy, a shorter wavelength helps in drawing more precise lines and patterns.

What is the role of extreme ultraviolet (EUV) lithography in modern semiconductor manufacturing?

EUV lithography uses light with a wavelength of 13.5 nanometers, which is effective for 7nm and below process nodes. EUV offers higher precision and better patterning compared to previous technologies like AERF, especially at smaller process nodes.

How is EUV different from previous photolithography technologies like AERF?

EUV differs from AERF in its light source, where AERF uses a laser, and EUV uses plasma-generated light. Additionally, AERF relies on lenses, while EUV uses mirrors, and AERF masks transmit or block light, whereas EUV masks reflect or absorb light.

What are the main advantages of using EUV over AERF in semiconductor manufacturing?

EUV reduces the need for multiple patterning by allowing patterns to be created with a single mask and photolithography process. This leads to cost reductions, fewer process steps, and improved yield by reducing the chances of defects from contamination.

How does EUV lithography reduce costs in semiconductor manufacturing?

EUV reduces costs by reducing the number of masks, processing steps, and overall processing time. With fewer steps, the likelihood of defects is reduced, which also contributes to cost savings.

What is the future direction of EUV technology according to Samsung Foundry?

Samsung Foundry is continuing to explore ways to more efficiently utilize EUV technology for semiconductor manufacturing, ensuring that it remains a viable solution for smaller process nodes and improving its efficiency further.